rf0 1086 -2 , rev a (9 /30 /13 ) ?201 3 microsemi corporation page 1 of 5 usbq50403c e3 C usbq50424ce3 available 500 w, bidirectional low capacitance tvs a rray description this transient voltage suppressor (tvs) is assembled in a qfn - 143 package which has the same pinout and footprint as the sot - 143 package. the configuration gives protection to 1 bidirectional data or interface line. it is designed for use in applications where low capacitance protection is required at the board level from voltage transients caused by electro static discharge (esd) as defined in iec 61000 -4- 2, electrical fast transients (eft) per iec 61000 - 4- 4 and the secondary effects of lightning . these tvs arrays have a peak power rating of 500 watts for an 8/20 s pulse (figure 1). with a capacitance of only 3 pf, this part can provide protection to very fast data lines including usb at 900 mbits/sec . qfn - 143 also available : unidirectional ( qfn - 143 ) usbq50403e3 C u sbq50424e3 important: for the latest information, visit our website http://www.microsemi.com . features ? pro tects 1 bidirectional line ? surge protection per iec 61000 -4- 2 and iec 61000 -4-4 ? ultra low capacitance (3 pf per line pair , s ee schematic for the line pair ) ? low profile surface mount package ? rohs compliant versions are available applications / benefits ? eia rs485 data rates: 5 mbps ? 10 base - t ethernet ? us b data rate 900 mbps maximum ratings @ 25 oc unless otherwise noted parameters/test conditions symbol value unit storage temperature t stg -5 5 to +1 50 o c junction temperature t j -5 5 to +1 25 o c peak pulse p ower d issipation with a 10/1000s waveform ( with a duty factor of 0.01% ) p pp 500 w solder temperature @ 10 s 260 o c msc C lawrence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 or (978) 620 -2 600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com halogen free downloaded from: http:///
rf0 1086 -2 , rev a (9 /30 /13 ) ?201 3 microsemi corporation page 2 of 5 usbq50403c e3 C usbq50424ce3 mechanical and packaging ? case: void- free transfer molded thermosetting epoxy body meeting ul94v -0 ? terminals: rohs c ompliant annealed matte -t in plating . r eadily solderable pe r mil - std - 750, method 2026 . ? marking: body marked with part number code ( q xxc) ? polarity: dot in corner indicates pin 1 ? tape- and -reel: standard per eia - 481 - b (add tr suffix to part number). consult factory for quantities. ? weight: approximately 16.53 milligrams ? see p ackage d imensions on last page. part nomenclature usb q 5 04 03 c e3 usb suitable q fn - 143 package 500 w p pp rating 4 pin package rohs complian t bidirecti o nal designator rated standoff voltage (v wm ) (see electrical characteristics table) symbols & definitions symbol definition v(br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature that caused it expressed in %/ c or mv/ c. i (b r) breakdown current : the current used for measuring breakdown voltage v (br) . i d standby current: the current through the device at rated stand - off voltage. i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepetiti ve peak impulse current that may be applied to a device. a random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared b efore the next transient arrives. v (br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. v c clamping voltage: the voltage across the device in a region of low differential resistance during the application of an impulse current (i pp ) for a specified waveform. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. electrical characteristics @ 25 oc unless otherwise stated part number device marking stand - off voltage v wm volts breakdown voltage v br @ 1 ma volts clamping voltage v c @ 1 amp (figure 2) volts clamping voltage v c @ 5 amp (figure 2) volts standby current i d @ v wm a capacitance (f= 1 mhz) c @ 0 v pf temperature coefficient of v br vbr mv/c max min max max max max max usb q 50403 c e3 q 03c 3.3 4 .0 8 .0 11 200 3 -5 usb q 50405ce3 q 05c 5.0 6.0 10.8 12 40 3 1 usb q 50412ce3 q 12c 12.0 13.3 19 .0 26 1 3 8 usb q 50415ce3 q 15c 15.0 16.7 24 .0 32 1 3 11 usb q 50424ce3 q 24c 24.0 26.7 43 .0 57 1 3 28 downloaded from: http:///
rf0 1086 -2 , rev a (9 /30 /13 ) ?201 3 microsemi corporation page 3 of 5 usbq50403c e3 C usbq50424ce3 graphs tp C pulse time C s figure 1 peak pulse power vs. pulse time t ime C s f igure 2 pulse waveform i pp peak pulse current - % i pp p pp C peak pulse power - kw downloaded from: http:///
rf0 1086 -2 , rev a (9 /30 /13 ) ?201 3 microsemi corporation page 4 of 5 usbq50403c e3 C usbq50424ce3 package dimensions pa d layout see schematic on next page ref. dimensions inc h millimeters min max min max a 0.112 0.116 2.85 2.95 b 0.096 0.100 2.45 2.55 c 0.0354 0.0366 0.900 0.930 d 0.020 0.024 0.50 0.60 e 0.031 nom 0.80 nom f 0.069 nom 1.75 nom g 0.018 nom 0.45 nom h 0.076 nom 1.92 nom ref. dimensions inch millimeters nominal nominal a1 0.112 2.85 a2 0.079 2.00 a3 0.071 1.80 b1 0.108 2.75 b2 0.075 1.90 c 0.041 1.05 d 0.033 0.85 e 0.032 0.80 f 0.033 0.85 g 0.047 1.20 downloaded from: http:///
rf0 1086 -2 , rev a (9 /30 /13 ) ?201 3 microsemi corporation page 5 of 5 usbq50403c e3 C usbq50424ce3 schematic seen from above downloaded from: http:///
|
